FDC6401N
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain–Source Breakdown Voltage
V
I
= 0 V, I = 250 mA
20
−
−
−
V
DSS
GS
D
Breakdown Voltage Temperature
Coefficient
= 250 mA, Referenced to 25°C
−
13
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
DS
V
GS
V
GS
= 16 V, V = 0 V
−
−
−
−
−
−
1
mA
nA
nA
DSS
GS
I
= 12 V, V = 0 V
−100
100
GSSF
GSSR
DS
I
= −12 V, V = 0 V
DS
ON CHARACTERISTICS (Note 2)
V
Gate Threshold Voltage
V
I
= V , I = 250 mA
0.5
0.9
1.5
V
GS(th)
DS
GS
D
Gate Threshold Voltage Temperature
Coefficient
= 250 mA, Referenced to 25°C
−
−3
−
mV/°C
DVGS(th)
DTJ
D
R
Static Drain–Source On–Resistance
V
GS
V
GS
V
GS
= 4.5 V, I = 3.0 A
−
−
−
50
66
71
70
95
106
mW
DS(on)
D
= 2.5 V, I = 2.5 A
D
= 4.5 V, I = 3.0 A, T = 125°C
D
J
I
On–State Drain Current
V
GS
V
DS
= 4.5 V, V = 5 V
12
−
−
−
A
S
D(on)
DS
g
FS
Forward Transconductance
= 5 V, I = 3.0 A
−
10
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 10 V, V = 0 V, f = 1.0 MHz
−
−
−
324
82
−
−
−
pF
pF
pF
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
42
rss
SWITCHING CHARACTERISTICS (Note 2)
t
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
V
= 10 V, I = 1 A,
−
−
−
−
−
−
−
5
7
10
14
23
3
ns
ns
d(on)
DD
GS
D
= 4.5 V, R
= 6 W
GEN
t
r
t
13
ns
d(off)
t
f
1.6
3.3
0.95
0.7
ns
Q
V
DS
V
GS
= 10 V, I = 3.0 A,
4.6
−
nC
nC
nC
g
D
= 4.5 V
Q
gs
gd
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward Voltage = 0 V, I = 0.8 A (Note 2)
I
−
−
−
0.8
1.2
A
V
S
V
SD
V
GS
0.7
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
JC
CA
a. 130°C/W when mounted
b. 140°C/W when mounted
c. 180°C/W when mounted
on a minimum pad.
2
2
on a 0.125 in pad of 2 oz.
on a .004 in pad of 2 oz.
copper.
copper.
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
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