Typical Characteristics TJ = 25°C unless otherwise noted
10
2000
1000
ID = -4.9A
Ciss
8
VDD = -10V
VDD = -15V
6
Coss
VDD = -20V
4
Crss
2
0
100
50
f = 1MHz
= 0V
V
GS
0
4
8
12
16
20
0.1
1
10
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
105
30
10
104
VDS = 0V
100us
1ms
103
102
1
0.1
TJ = 150oC
101
10ms
100ms
1s
SINGLE PULSE
TJ = MAX RATED
100
R
θJA = 156oC/W
10-1
TA = 25oC
TJ = 25oC
10s
DC
10-2
10-3
THIS AREA IS
LIMITED BY r
DS(on)
0.01
0.1
1
10
100
0
5
10
15
20
25
30
35
-VGS, GATE TO SOURCE VOLTAGE (V)
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Gate Leakage Current vs Gate to
Source Voltage
Figure10. Forward Bias Safe
Operating Area
1000
VGS = -10V
SINGLE PULSE
RθJA = 156oC/W
T
A = 25oC
100
10
1
0.5
10-4
10-3
10-2
10-1
t, PULSE WIDTH (s)
100
101
102
103
Figure 11. Single Pulse Maximum Power Dissipation
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