FDC610PZ
P-Channel PowerTrench® MOSFET
–30V, –4.9A, 42mΩ
General Description
Features
This P-Channel MOSFET is produced using ON
Max rDS(on) = 42mΩ at VGS = –10V, ID = –4.9A
Max rDS(on) = 75mΩ at VGS = –4.5V, ID = –3.7A
Low gate charge (17nC typical).
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain low gate charge for superior switching performance.
These devices are well suited for battery power applications:
load switching and power management, battery charging
circuits, and DC/DC conversion.
High performance trench technology for extremely low rDS(on).
SuperSOTTM –6 package: small footprint (72% smaller than
standard SO–8) low profile (1mm thick).
Application
RoHS Compliant
DC - DC Conversion
S
D
D
D
G
D
6
5
4
1
2
D
D
G
D
S
3
3
D
Pin 1
SuperSOTTM -6
MOSFET Maximum Ratings TA= 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
–30
±25
V
V
(Note 1a)
–4.9
ID
A
–20
Power Dissipation
(Note 1a)
(Note 1b)
1.6
PD
W
Power Dissipation
0.8
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
78
°C/W
156
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
8mm
Quantity
.610Z
FDC610PZ
SSOT6
7’’
3000units
1
©2007 Semiconductor Components Industries, LLC.
October-2017, Rev.2
Publication Order Number:
FDC610PZ/D
ONSEMI [ ONSEMI ]
