Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = –250µA, VGS = 0V
D = –250µA, referenced to 25°C
–30
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
I
–22
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = –24V, VGS = 0V
VGS = ±25V, VDS = 0V
–1
µA
µA
±10
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = –250µA
–1
–2.2
6
–3
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = –250µA, referenced to 25°C
mV/°C
V
GS = –10V, ID = –4.9A
36
58
50
15
42
75
60
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = –4.5V, ID = –3.7A
mΩ
VGS = –10V, ID = –4.9A, TJ = 125°C
VDD = –10V, ID = –4.9A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
755
145
125
13
1005
195
pF
pF
pF
Ω
V
DS = –15V, VGS = 0V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz
190
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
7
4
14
10
53
37
24
13
ns
ns
VDD = –15V, ID = –4.9A
VGS = –10V, RGEN = 6Ω
Turn-Off Delay Time
Fall Time
33
23
17
9
ns
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VGS = 0V to –10V
nC
nC
nC
nC
Qg
VGS = 0V to –4.5V
V
DD = –15V,
ID = –4.9A
Qgs
Qgd
2.9
4.3
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain-Source Diode Forward Current
–1.3
–1.2
35
A
V
VSD
trr
Source to Drain Diode Forward Voltage VGS = 0V, IS = –1.3A (Note 2)
–0.8
19
9
Reverse Recovery Time
IF = –4.9A, di/dt = 100A/µs
Reverse Recovery Charge
ns
nC
Qrr
18
Notes:
2
1. R
is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
θCA
θJA
θJC
the user's board design.
a. 78°C/W when mounted on a
1 in pad of 2 oz copper.
b. 156°C/W when mounted on a
minimum pad of 2 oz copper.
2
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
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