CSPEMI201AG
ELECTRICAL OPERATING CHARACTERISTICS1
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
R
C
Resistance
9
10
11
Ω
Capacitance
80
100
120
1.0
pF
ILEAK
VSIG
Diode Leakage Current
VIN=5.0V
μA
Signal Voltage
Positive Clamp
Negative Clamp
ILOAD = 10mA
5
-15
7
-10
15
-5
V
V
VESD
In-system ESD Withstand Voltage
a) Human Body Model, MIL-STD-883,
Method 3015
Note 2
15
8
kV
kV
b) Contact Discharge per IEC 61000-4-2
Level 4
VCL
Clamping Voltage during ESD Discharge
MIL-STD-883 (Method 3015), 8kV
Positive Transients
Notes 2 and 3
+15
-19
V
V
Negative Transients
fC
Cut-off frequency
R = 10Ω, C = 100pF
31
MHz
Z
SOURCE = 50Ω, ZLOAD = 50Ω
Note 1: TA=25°C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin
A1, then clamping voltage is measured at Pin C1.
Rev. 3 | Page 5 of 9 | www.onsemi.com
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