CM2020-00TR
SYMBOL
V
ON
V
F
PARAMETER
VOLTAGE drop across level
shifting NFET when ON
Diode Forward Voltage
Top Diode
Bottom Diode
ESD Withstand Voltage, contact
discharge per IEC 61000-4-2
standard (IEC)
Channel Clamp Voltage
Positive Transients
Negative Transients
Dynamic Resistance
Positive Transients
Negative Transients
TMDS Channel Leakage Current
TMDS Channel Input
Capacitance
TMDS Channel Input
Capacitance Matching
Level Shifting Input Capacitance,
Capacitance to GND
Level Shifting Input Capacitance,
Capacitance to GND
CONDITIONS
LV_SUPPLY = 2.5V, V
S
= GND,
I
DS
= 3mA
I
F
= 8mA, T
A
= 25°
C
0.6
0.6
Pins 4, 7, 10, 13, 20, 21, 22, 23, 24,
27, 30, 33, 38; T
A
=25°
C
Note 2
T
A
=25° I
PP
= 1A, t
P
= 8/20uS;
C,
Note 3
10.8
-2.1
I
PP
= 1A, t
P
= 8/20µS; T
A
= 25°
C;
Note 3
T
A
= 25°
C
5V_SUPPLY= 5.0V, Measured at
1MHz, V
BIAS
=2.5V
5V_SUPPLY= 5.0V, Measured at
1MHz, V
BIAS
=2.5V;
Note 4
5V_SUPPLY= 5.0V, Measured at
100KHz, V
BIAS
=2.5V;
Note 2
5V_SUPPLY= 5.0V,
Measured at 100KHz,
V
BIAS
=2.5V
5V_SUPPLY= 5.0V, Measured at
100KHz, V
BIAS
=2.5V
1.4
0.9
0.01
0.9
1
1.2
V
V
Ω
Ω
µA
pF
0.85
0.85
0.95
0.95
V
V
kV
MIN
75
TYP
95
MAX
140
UNITS
mV
V
ESD
±
8
V
CL
R
DYN
I
LEAK
C
IN,
TMDS
∆
C
IN,
TMDS
0.05
pF
C
IN,
DDC
3.5
4
pF
C
IN,
CEC
3.5
4
pF
C
IN,
HP
Level Shifting Input Capacitance,
Capacitance to GND
3.5
4
pF
Note 1: Operating Characteristics are over Standard Operating Conditions unless otherwise specified.
Note2: Standard IEC 61000-4-2, C
DISCHARGE
=150pF, R
DISCHARGE
=330
Ω
, 5V_SUPPLY and LV_SUPPLY within recommended operating
conditions, GND=0V and ESD_BYP (pin 37), 5V_OUT (pin 38), and HOTPLUG_DET_OUT (pin 20) each bypassed with a
0.1µF ceramic capacitor connected to GND.
Note 3: These measurements performed with no external capacitor on ESD_BYP.
Note 4: Intra-pair matching, each TMDS pair (i.e. D+, D-)
Rev. 4 | Page 6 of 13 | www.onsemi.com
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