14
13
12
11
10
0.5
0.4
0.3
V
= 5 V
CE
9
8
7
6
5
4
I
/I = 3
C B
0.2
0.1
0
I
/I = 2
C B
0.01 0.02
0.05 0.1
0.2
0.5
1.0 2.0
5.0
10
0.1
0.2
0.5
I , COLLECTOR CURRENT (A)
C
1.0
2.0
5.0
10
I
, COLLECTOR CURRENT (A)
C
Figure 5. DC Current Gain
Figure 6. Collector–Emitter Saturation Voltage
1.6
2.8
2.4
I
= 2 A
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
C
I
= 3 A
C
I
= 3.5 A
= 4 A
C
2.0
1.6
1.2
0.8
0.4
I
C
I
= 4.5 A
C
I
/I = 2
C B
0.1
0.2
0.5
1.0
2.0
5.0
10
0.1
0.2
0.5
I , BASE CURRENT CONTINUOUS (A)
B
1.0
2.0
5.0
10
I
, COLLECTOR CURRENT (A)
C
Figure 7. Base–Emitter Saturation Voltage
Figure 8. Collector Saturation Region
15
10
5
1 µs
I
(max.)
2
5
10
C
2
1
20
I
(max.)
CM
50
0.5
100
200
0.2
0.1
300
1 ms
2 ms
0.05
T
≤ 95°C
C
BONDING WIRE LIMIT
THERMAL LIMIT
0.02
0.01
D.C.
SECOND BREAKDOWN LIMIT
0.005
DUTY CYCLE
≤
1%
0.002
0.001
1
BU208, A
1
Pulse width ≤ 20 µs. Duty cycle ≤ 0.25. R
BE
≤ 100 Ohms.
1
2
5 10 20
50 100 200 500 1000
2000
V
, COLLECTOR–EMITTER VOLTAGE (V)
CE
Figure 9. Maximum Forward Bias Safe
Operating Area
5
Motorola Bipolar Power Transistor Device Data
ONSEMI [ ONSEMI ]
