ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(I = 100 mAdc, L = 25 mH)
V
700
—
—
—
—
Vdc
mAdc
Vdc
CEO(sus)
C
1
Collector Cutoff Current
(V = rated V , V
ALL TYPES
I
1.0
CES
= 0)
CE CES BE
1
Emitter Base Voltage
(I = 0, I = 10 mAdc)
V
EBO
5
—
—
7
—
—
C
E
(I = 0, I = 100 mAdc)
C
E
1
ON CHARACTERISTICS
DC Current Gain
(I = 4.5 Adc, V
C CE
h
2.25
—
—
—
—
—
1
FE
= 5 Vdc)
Collector–Emitter Saturation Voltage
(I = 4.5 Adc, I = 2 Adc)
V
Vdc
Vdc
CE(sat)
BE(sat)
C
B
Base–Emitter Saturation Voltage
(I = 4.5 Adc, I = 2 Adc)
V
—
1.5
C
B
DYNAMIC CHARACTERISTICS
Current–Gain Bandwidth Product
f
—
—
4
—
—
MHz
pF
T
(I = 0.1 Adc, V
C CE
= 5 Vdc, f = 1 MHz)
test
Output Capacitance
(V = 10 Vdc, I = 0, f
C
125
ob
= 1 MHz)
CB test
E
SWITCHING CHARACTERISTICS
Storage Time (see test circuit fig. 1)
t
—
—
8
—
—
µs
µs
s
(I = 4.5 Adc, I = 1.8 Adc, L = 10 µH)
B1
C
B
Fall time (see test circuit fig. 1)
(I = 4.5 Adc, I = 1.8 Adc, L = 10 µH)
t
0.4
f
C
B1
B
1
Pulse test: PW = 300 µs; Duty cycle
2%.
2
Motorola Bipolar Power Transistor Device Data
ONSEMI [ ONSEMI ]
