BC212,B BC213 BC214
2.0
hFE, NORMALIZED DC CURRENT GAIN
1.5
1.0
0.7
0.5
VCE = –10 V
TA = 25°C
V, VOLTAGE (VOLTS)
–1.0
–0.9
–0.8
–0.7
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1
VCE(sat) @ IC/IB = 10
–0.5 –1.0 –2.0
–5.0 –10 –20
IC, COLLECTOR CURRENT (mAdc)
–50 –100
TA = 25°C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = –10 V
0.3
0.2
–0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
–50 –100 –200
IC, COLLECTOR CURRENT (mAdc)
0
–0.1 –0.2
Figure 1. Normalized DC Current Gain
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
Figure 2. “Saturation” and “On” Voltages
400
300
200
150
100
80
60
40
30
20
–0.5
–1.0
–2.0 –3.0 –5.0
–10
–20 –30
IC, COLLECTOR CURRENT (mAdc)
–50
VCE = –10 V
TA = 25°C
10
Cib
7.0
C, CAPACITANCE (pF)
5.0
TA = 25°C
3.0
Cob
2.0
1.0
–0.4 –0.6
–1.0
–2.0
–4.0 –6.0 –10
VR, REVERSE VOLTAGE (VOLTS)
–20 –30 –40
Figure 3. Current–Gain — Bandwidth Product
Figure 4. Capacitances
0.5
0.3
VCE = –10 V
f = 1.0 kHz
TA = 25°C
r b
′
, BASE SPREADING RESISTANCE (OHMS)
1.0
hob, OUTPUT ADMITTANCE (OHMS)
150
140
130
VCE = –10 V
f = 1.0 kHz
TA = 25°C
0.1
0.05
0.03
120
110
0.01
–0.1
–0.2
–0.5
–1.0
–2.0
IC, COLLECTOR CURRENT (mAdc)
–5.0
–10
100
–0.1
–0.2 –0.3 –0.5
–1.0
–2.0 –3.0
IC, COLLECTOR CURRENT (mAdc)
–5.0
–10
Figure 5. Output Admittance
Figure 6. Base Spreading Resistance
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
ONSEMI [ ON SEMICONDUCTOR ]
