MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
Order this document
by BC212/D
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
BC212,B
BC213
BC214
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
BC
212
–50
–60
BC
213
–30
–45
–5.0
–100
350
2.8
1.0
8.0
– 55 to +150
BC
214
–30
–45
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
357
125
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Collector – Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –10
m
A, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10
m
Adc, IC = 0)
Collector–Emitter Leakage Current
(VCB = –30 V)
Emitter–Base Leakage Current
(VEB = –4.0 V, IC = 0)
BC212
BC213
BC214
BC212
BC213
BC214
BC212
BC213
BC214
BC212
BC213
BC214
BC212
BC213
BC214
Symbol
V(BR)CEO
Min
–50
–30
–30
–60
–45
–45
–5
–5
–5
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max
—
—
—
—
—
—
—
—
—
–15
–15
–15
–15
–15
–15
Unit
Vdc
V(BR)CBO
Vdc
V(BR)EBO
Vdc
ICBO
nAdc
IEBO
nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1
ONSEMI [ ON SEMICONDUCTOR ]
