BC212,B BC213 BC214
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –10
µAdc,
VCE = –5.0 Vdc)
hFE
BC212
BC213
BC214
BC212
BC213
BC214
BC212, BC214
BC213
VCE(sat)
—
—
VBE(sat)
VBE(on)
—
–0.6
–0.10
–0.25
–1.0
–0.62
—
–0.6
–1.4
–0.72
Vdc
Vdc
40
40
100
60
80
140
—
—
—
—
—
—
—
—
120
140
—
—
—
—
—
600
—
—
Vdc
—
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
(IC = –100 mAdc, VCE = –5.0 Vdc)(1)
Collector – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –0.5 mAdc)
(IC = –100 mAdc, IB = –5.0 mAdc)(1)
Base – Emitter Saturation Voltage
(IC = –100 mAdc, IB = –5.0 mAdc)
Base–Emitter On Voltage
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz)
fT
BC212
BC214
BC213
Cob
NF
BC214
BC212, BC213
hfe
BC212
BC213
BC214
BC212B
60
80
140
200
—
—
—
—
—
—
—
400
—
—
—
—
2
10
—
—
—
—
—
280
320
360
—
—
—
—
6.0
pF
dB
MHz
Common–Base Output Capacitance
(VCB = –10 Vdc, IC = 0, f = 1.0 MHz)
Noise Figure
(IC = –0.2 mAdc, VCE = –5.0 Vdc,
RS = 2.0 kΩ , f = 1.0 kHz)
(IC = –0.2 mAdc, VCE = –5.0 Vdc,
RS = 2.0 kΩ, f = 1.0 kHz, f = 200 Hz)
Small–Signal Current Gain
(IC = –2.0 mAdc, VCE = –5.0 Vdc, f = 1.0 kHz)
1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ONSEMI [ ON SEMICONDUCTOR ]
