74HC138
DC ELECTRICAL CHARACTERISTICS
(Voltages Referenced to GND)
Symbol
V
IH
Parameter
Minimum High−Level Input
Voltage
Test Conditions
V
out
= 0.1 V or V
CC
– 0.1 V
|I
out
|
v
20
mA
V
CC
(V)
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
2.0
4.5
6.0
3.0
4.5
6.0
2.0
4.5
6.0
3.0
4.5
6.0
6.0
6.0
Guaranteed Limit
−55_C
to 25_C
1.5
2.1
3.15
4.2
0.5
0.9
1.35
1.8
1.9
4.4
5.9
2.48
3.98
5.48
0.1
0.1
0.1
0.26
0.26
0.26
±0.1
4
v
85_C
1.5
2.1
3.15
4.2
0.5
0.9
1.35
1.8
1.9
4.4
5.9
2.34
3.84
5.34
0.1
0.1
0.1
0.33
0.33
0.33
±1.0
40
v
125_C
1.5
2.1
3.15
4.2
0.5
0.9
1.35
1.8
1.9
4.4
5.9
2.20
3.70
5.20
0.1
0.1
0.1
0.40
0.40
0.40
±1.0
40
mA
mA
V
Unit
V
V
IL
Maximum Low−Level Input
Voltage
V
out
= 0.1 V or V
CC
– 0.1 V
|I
out
|
v
20
mA
V
V
OH
Minimum High−Level Output
Voltage
V
in
= V
IH
or V
IL
|I
out
|
v
20
mA
V
in
= V
IH
or V
IL
|I
out
|
v
2.4 mA
|I
out
|
v
4.0 mA
|I
out
|
v
5.2 mA
V
V
OL
Maximum Low−Level Output
Voltage
V
in
= V
IH
or V
IL
|I
out
|
v
20
mA
V
in
= V
IH
or V
IL
|I
out
|
v
2.4 mA
|I
out
|
v
4.0 mA
|I
out
|
v
5.2 mA
I
in
I
CC
Maximum Input Leakage
Current
Maximum Quiescent Supply
Current (per Package)
V
in
= V
CC
or GND
V
in
= V
CC
or GND
I
out
= 0
mA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).
AC ELECTRICAL CHARACTERISTICS
(C
L
= 50 pF, Input t
r
= t
f
= 6.0 ns)
Symbol
t
PLH
,
t
PHL
Parameter
Maximum Propagation Delay, Input A to Output Y
(Figures 1 and 4)
V
CC
(V)
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
−
Guaranteed Limit
−55_C
to 25_C
135
90
27
23
110
85
22
19
120
90
24
20
75
30
15
13
10
v
85_C
170
125
34
29
140
100
28
24
150
120
30
26
95
40
19
16
10
v
125_C
205
165
41
35
165
125
33
28
180
150
36
31
110
55
22
19
10
Unit
ns
t
PLH
,
t
PHL
Maximum Propagation Delay, CS1 to Output Y
(Figures 2 and 4)
ns
t
PLH
,
t
PHL
Maximum Propagation Delay, CS2 or CS3 to Output Y
(Figures 3 and 4)
ns
t
TLH
,
t
THL
Maximum Output Transition Time, Any Output
(Figures 2 and 4)
ns
C
in
Maximum Input Capacitance
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
Typical @ 25°C, V
CC
= 5.0 V
C
PD
Power Dissipation Capacitance (Per Package)*
55
pF
* Used to determine the no−load dynamic power consumption: P
D
= C
PD
V
CC2
f + I
CC
V
CC
. For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).
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