¡ Semiconductor
AC Characteristics
Parameter
Clock Cycles Time
CL = 3
CL = 2
Symbol
t
CC
t
AC
t
CH
t
CL
t
SI
t
HI
t
OLZ
t
OHZ
t
OH
t
RC
t
RP
t
RAS
t
RCD
t
WR
t
RRD
t
REF
t
T
l
CCD
l
CKE
l
DOZ
l
DOD
l
DWD
MD56V62160-10
Min.
10
15
—
—
3
3
3
1
3
—
3
90
30
60
30
15
20
—
—
1
1
2
0
0
2
3
2
Max.
—
—
9
9
—
—
—
—
—
8
—
—
—
10
5
—
—
—
64
—
3
MD56V62160/H
Note 1, 2
MD56V62160-12 MD56V62160H-15
Min.
12
17.5
—
—
3
3
3
1.5
3
—
3
115
45
70
35
24
24
—
t
SI
+ 1 CLK
—
1
1
2
0
0
2
3
2
Max.
—
—
10
14
—
—
—
—
—
10
—
—
—
10
5
—
—
—
64
—
3
Min.
15
15
—
—
3
3
3
1
3
—
3
105
30
70
30
15
24
—
t
SI
+ 1 CLK
—
1
1
2
0
0
2
3
2
Max.
—
—
9
9
—
—
—
—
—
8
—
—
—
10
5
—
—
—
64
—
3
Unit Note
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
Cycle
Cycle
Cycle
Cycle
Cycle
Cycle
Cycle
Cycle
3
3, 4
3, 4
Access Time from CL = 3
Clock
CL = 2
Clock "H" Pulse Time
Clock "L" Pulse Time
Input Setup Time
Input Hold Time
Output Low Impedance
Time from Clock
Output High Impedance
Time from Clock
Output Hold from Clock
RAS
Cycle Time
RAS
Precharge Time
RAS
Active Time
RAS
to
CAS
Delay Time
Write Recovery Time
RAS
to
RAS
Bank Active
Delay Time
Refresh Time
Power-down Exit Set-up Time
Input Level Transition Time
CAS
to
CAS
Delay Time (Min.)
Clock Disable Time from CKE
Data Output High Impedance
Time from UDQM, LDQM
Data Input Mask Time from
UDQM, LDQM
Data Input Time from Write
Command
t
PDE
t
SI
+ 1 CLK
Data Output High Impedance
l
Time from Precharge Command
ROH
Active Command Input Time from Mode
Register Set Command Input (Min.)
Write Command Input Time
from Output
l
MRD
l
OWD
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