NXP Semiconductors
PEMD3; PIMD3; PUMD3
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
SOT363
SOT457
SOT666
Per device
R
th(j-a)
thermal resistance from
junction to ambient
SOT363
SOT457
SOT666
[1]
[2]
[3]
Conditions
in free air
Min
Typ
Max
Unit
Per transistor
-
-
-
-
-
-
625
417
625
K/W
K/W
K/W
in free air
-
-
-
-
-
-
416
208
416
K/W
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB with 65
μm
copper strip line, standard footprint.
Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
I
CBO
I
CEO
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
Conditions
V
CB
= 50 V; I
E
= 0 A
V
CE
= 30 V; I
B
= 0 A
V
CE
= 30 V; I
B
= 0 A;
T
j
= 150
°C
V
EB
= 5 V; I
C
= 0 A
V
CE
= 5 V; I
C
= 5 mA
I
C
= 10 mA; I
B
= 0.5 mA
Min
-
-
-
-
30
-
-
2.5
7
0.8
V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
-
-
-
Typ
-
-
-
-
-
-
1.1
1.8
10
1
-
-
-
Max
100
1
50
400
-
150
0.8
-
13
1.2
-
2.5
3
pF
pF
mV
V
V
kΩ
Unit
nA
μA
μA
μA
Per transistor; for the PNP transistor with negative polarity
I
EBO
h
FE
V
CEsat
V
I(off)
V
I(on)
R1
R2/R1
C
c
off-state input voltage V
CE
= 5 V; I
C
= 100
μA
on-state input voltage V
CE
= 0.3 V; I
C
= 10 mA
bias resistor 1 (input)
bias resistor ratio
collector capacitance
TR1 (NPN)
TR2 (PNP)
PEMD3_PIMD3_PUMD3_10
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 10 — 15 November 2009
4 of 11
PHILIPS [ NXP SEMICONDUCTORS ]
