PUMD3 参数 Datasheet PDF下载

NXP Semiconductors

PEMD3; PIMD3; PUMD3

NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ

5. Limiting values

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V

CBO

V

CEO

V

EBO

V

I

Parameter

collector-base voltage

collector-emitter voltage

emitter-base voltage

input voltage TR1

positive

negative

input voltage TR2

positive

negative

I

O

I

CM

P

tot

output current (DC)

peak collector current

total power dissipation

SOT363

SOT457

SOT666

T

stg

T

j

T

amb

Per device

P

tot

total power dissipation

SOT363

SOT457

SOT666

[1]

[2]

[3]

Conditions

open emitter

open base

open collector

Min

-

-

-

-

-

-

-

-

-

Max

50

50

10

+40

−10

+10

−40

100

100

200

300

200

+150

150

+150

Unit

V

V

V

V

V

V

V

mA

mA

mW

mW

mW

°C

°C

°C

Per transistor; for the PNP transistor with negative polarity

T

amb

≤

25

°C

-

-

-

−65

-

−65

storage temperature

junction temperature

ambient temperature

T

amb

≤

25

°C

-

-

-

300

600

300

mW

mW

mW

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

Device mounted on an FR4 PCB with 65

μm

copper strip line, standard footprint.

Reflow soldering is the only recommended soldering method.

PEMD3_PIMD3_PUMD3_10

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 10 — 15 November 2009

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