NXP Semiconductors
Product data sheet
NPN switching transistor
FEATURES
•
Collector current capability I
C
= 200 mA
•
Collector-emitter voltage V
CEO
= 40 V.
APPLICATIONS
•
General switching and amplification.
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
PNP complement: MMBT3906.
MARKING
TYPE NUMBER
MMBT3904
Note
1.
∗
= p: Made in Hong Kong.
∗
= t: Made in Malaysia.
∗
= W: Made in China.
Top view
MMBT3904
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
PARAMETER
collector-emitter voltage
collector current (DC)
MAX.
40
200
UNIT
V
mA
MARKING CODE
7A∗
handbook, halfpage
3
3
1
2
1
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
MMBT3904
−
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
2004 Feb 03
2
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