NXP Semiconductors
PF4210
14-channel power management integrated circuit (PMIC) for audio/video applications
Symbol
Parameter
Min
Typ
Max
Unit
tONSW1C
Turn on time
µs
Enable to 90 % of end value
—
—
500
ISW1C = 0 mA
DVS clk = 25 mV/4 µs, VIN
= VINSW1C = 4.5 V, VSW1C
1.875 V
=
fSW1C
Switching frequency
SW1CFREQ[1:0] = 00
SW1CFREQ[1:0] = 01
SW1CFREQ[1:0] = 10
MHz
%
—
—
—
1.0
2.0
4.0
—
—
—
ηSW1C
Efficiency
VIN = 3.6 V, fSW1C = 2.0 MHz,
LSW1C = 1.0 µH
—
—
—
—
—
—
77
78
86
84
78
65
—
—
—
—
—
—
PFM, 0.9 V, 1.0 mA
PFM, 1.2 V, 50 mA
APS, PWM, 1.2 V, 400 mA
APS, PWM, 1.2 V, 600 mA
APS, PWM, 1.2 V, 1000 mA
APS, PWM, 1.2 V, 2000 mA
ΔVSW1C
Output ripple
—
—
—
10
—
—
—
20
20
mV
mV
mV
mV
VSW1CLIR
VSW1CLOR
VSW1CLOTR
Line regulation (APS, PWM)
DC load regulation (APS, PWM)
Transient load regulation
Transient load = 0.0 mA to 1.0 A,
di/dt = 100 mA/µs
—
—
—
—
50
50
Overshoot
Undershoot
ISW1CQ
Quiescent current
PFM mode
µA
—
—
22
—
—
APS mode
145
RONSW1CP
RONSW1CN
ISW1CPQ
SW1C P-MOSFET RDS(on)
at VINSW1C = 3.3 V
mΩ
mΩ
µA
µA
Ω
—
—
—
184
211
—
206
260
10.5
SW1C N-MOSFET RDS(on)
at VINSW1C = 3.3 V
SW1C P-MOSFET leakage current
VINSW1C = 4.5 V
ISW1CNQ
SW1C N-MOSFET leakage current
VINSW1C = 4.5 V
—
—
—
3.5
—
RSW1CDIS
Discharge resistance
600
PF4210
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2018. All rights reserved.
Data sheet: technical data
Rev. 2.0 — 14 November 2018
50 / 137