NXP Semiconductors
PF4210
14-channel power management integrated circuit (PMIC) for audio/video applications
Symbol
Parameter
Min
—
Typ
258
—
Max
326
7.5
Unit
RONSW1AN
SW1A N-MOSFET RDS(on)
VINSW1A = 3.3 V
mΩ
ISW1APQ
SW1A P-MOSFET leakage current
VINSW1A = 4.5 V
µA
µA
mΩ
mΩ
µA
µA
Ω
—
ISW1ANQ
RONSW1BP
RONSW1BN
ISW1BPQ
SW1A N-MOSFET leakage current
VINSW1A = 4.5 V
—
—
2.5
SW1B P-MOSFET RDS(on)
VINSW1B = 3.3 V
—
215
258
—
245
326
7.5
SW1B N-MOSFET RDS(on)
VINSW1B = 3.3 V
—
SW1B P-MOSFET leakage current
VINSW1B = 4.5 V
—
ISW1BNQ
SW1B N-MOSFET leakage current
VINSW1B = 4.5 V
—
—
—
2.5
—
RSW1ABDIS
Discharge resistance
600
SW1C (independent)
VINSW1C
Operating input voltage
V
V
2.8
—
—
4.5
—
VSW1C
Nominal output voltage
Output voltage accuracy
Table 39
VSW1CACC
PWM, APS, 2.8 V < VIN < 4.5 V, 0 <
ISW1C < 2.0 A
−25
—
—
25
mV
%
0.625 V ≤ VSW1C ≤ 1.450 V
1.475 V ≤ VSW1C ≤ 1.875 V
−3.0 %
3.0 %
PFM, steady state 2.8 V < VIN
4.5 V, 0 < ISW1C < 50 mA
<
−65
—
—
—
65
mV
mV
%
−45
45
0.625 V < VSW1C < 0.675 V
0.7 V < VSW1C < 0.85 V
−3.0 %
3.0 %
0.875 V < VSW1C < 1.875 V
ISW1C
Rated output load current
mA
A
2.8 V < VIN < 4.5 V, 0.625 V <
VSW1C < 1.875 V
—
—
2000
ISW1CLIM
Current limiter peak current
detection
Current through inductor
SW1CILIM = 0
2.6
4.0
3.0
5.2
3.9
1.95
SW1CILIM = 1
VSW1COSH
Start up overshoot
ISW1C = 0 mA
mV
—
—
66
DVS clk = 25 mV/4 µs, VIN
= VINSW1C = 4.5 V, VSW1C
1.875 V
=
PF4210
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© NXP B.V. 2018. All rights reserved.
Data sheet: technical data
Rev. 2.0 — 14 November 2018
49 / 137
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