NXP Semiconductors
FXTH87E
FXTH87E, Family of Tire Pressure Monitor Sensors
• The next burst program command has been queued before the current program
operation has completed.
• The next sequential address selects a byte on the same physical row as the current
byte being programmed. A row of FLASH memory consists of 64 bytes. A byte within
a row is selected by addresses A5 through A0. A new row begins when addresses A5
through A0 are all zero.
The first byte of a series of sequential bytes being programmed in burst mode will
take the same amount of time to program as a byte programmed in standard mode.
Subsequent bytes will program in the burst program time provided that the conditions
above are met. In the case the next sequential address is the beginning of a new row,
the program time for that byte will be the standard time instead of the burst time. This is
because the high voltage to the array must be disabled and then enabled again. If a new
burst command has not been queued before the current command completes, then the
charge pump will be disabled and high voltage removed from the array.
Note 1: Required only once after reset.
Write to FCDIV (1)
FLASH PROGRAM AND
ERASE FLOW
Start
0
FACCERR?
1
Clear error
Write to FLASH,
to buffer address, and data
Write command to FCMD
Write 1 to FCBEF
to launch command
and clear FCBEF (2)
Note 2: Wait at least four bus
cycles before checking
FCBEF or FCCF.
Yes
FPVIOL or
FACCERR?
ERROR exit
No
0
FCCF?
1
Done
aaa-027998
Figure 9.ꢀFLASH program and erase flowchart
Programming time for the FLASH through the BDM function is dependent on the
specific external BDM interface tool and software being used. Consult tool vendor for
programming times.
FXTH87ERM
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© NXP B.V. 2019. All rights reserved.
Reference manual
Rev. 5.0 — 4 February 2019
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