NXP Semiconductors
Product data sheet
18-fold ESD transient voltage suppressor
GRAPHICAL DATA
BZA100
handbook, halfpage
10
MBG394
MBG393
handbook, halfpage
2.4
IZSM
(A)
Ptot
(W)
1.6
1
0.8
10
−1
10
−1
1
10
10
2
t (ms) 10
3
p
0
0
50
100
Ts (
o
C)
150
All diodes loaded.
Fig.2
Maximum non-repetitive peak reverse
current as a function of pulse time.
Fig.3 Power derating curve.
10
2
handbook, halfpage
MBG395
handbook, halfpage
100
MBG392
PZSM
(W)
Cd
(pF)
80
10
60
1
10
−1
1
10
10
2
t (ms) 10
3
p
40
0
2
4
VR (V)
6
P
ZSM
= V
ZSM
×
I
ZSM
.
V
ZSM
is the non-repetitive peak reverse voltage at I
ZSM
.
T
j
= 25
°C;
f = 1 MHz.
Fig.4
Maximum non-repetitive peak reverse power
dissipation as a function of pulse duration
(square pulse).
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
1997 Dec 02
4
PHILIPS [ NXP SEMICONDUCTORS ]
