NXP Semiconductors
Product data sheet
18-fold ESD transient voltage suppressor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
R
th j-a
PARAMETER
thermal resistance from junction to soldering point
thermal resistance from junction to ambient
CONDITIONS
one or more diodes loaded
BZA100
VALUE
56.5
100
UNIT
K/W
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
Z
V
F
V
ZSM
I
R
r
dif
S
Z
C
d
working voltage
forward voltage
non-repetitive peak reverse voltage
reverse current
differential resistance
temperature coefficient of
working voltage
diode capacitance
I
Z
= 5 mA
I
F
= 200 mA
t
p
= 1 ms; I
ZSM
= 2.5 A
V
R
= 5.25 V
I
Z
= 1 mA
I
Z
= 5 mA
I
Z
= 5mA
see Fig.5
V
R
= 0; f = 1 MHz
V
R
= 5.25 V; f = 1 MHz
−
−
−
−
120
60
pF
pF
6.4
−
−
−
−
−
−
6.8
−
−
−
−
−
3
7.2
1.3
11
2
40
8
−
V
V
V
µA
Ω
Ω
mV/K
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
1997 Dec 02
3
PHILIPS [ NXP SEMICONDUCTORS ]
