NXP Semiconductors
BT151-500RT
SCR, 12 A, 15 mA, 500 V, SOT78
10
3
I
TSM
(A)
003aad204
(1)
10
2
I
T
I
TSM
10
10
−5
t
t
p
T
j(init)
= 25
°C
max
10
−4
10
−3
t
p
(s)
10
−2
Fig 5.
Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
Conditions
Min
-
Typ
-
Max
1.3
Unit
K/W
thermal resistance from see
junction to mounting
base
thermal resistance from
junction to ambient free
air
R
th(j-a)
-
60
-
K/W
10
Z
th(j-mb)
(K/W)
001aaa962
1
10
−1
P
δ
=
t
p
T
10
−2
t
p
T
t
10
−3
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
Fig 6.
Transient thermal impedance from junction to mounting base as a function of pulse width
BT151-500RT_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 18 May 2009
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