NXP Semiconductors
BT151-500RT
SCR, 12 A, 15 mA, 500 V, SOT78
4. Limiting values
Table 4.
Symbol
V
DRM
V
RRM
I
T(AV)
I
T(RMS)
dI
T
/dt
I
GM
P
GM
T
stg
T
j
I
TSM
Limiting values
Parameter
repetitive peak off-state
voltage
repetitive peak reverse
voltage
average on-state
current
RMS on-state current
rate of rise of on-state
current
peak gate current
peak gate power
storage temperature
junction temperature
non-repetitive peak
on-state current
I
2
t for fusing
average gate power
peak reverse gate
voltage
half sine wave; t
p
= 8.3 ms; T
j(init)
= 25 °C
half sine wave; t
p
= 10 ms; T
j(init)
= 25 °C;
t
p
= 10 ms; sin-wave pulse
over any 20 ms period
half sine wave; T
mb
= 133 °C; see
half sine wave; all conduction angles;
I
T
= 20 A; I
G
= 50 mA; dI
G
/dt = 50 mA/µs
Conditions
Min
-
-
-
-
-
-
-
-40
-
-
-
-
-
-
Max
500
500
8
12.5
50
4
5
150
150
132
120
72
1
5
Unit
V
V
A
A
A/µs
A
W
°C
°C
A
A
A
2
s
W
V
In accordance with the Absolute Maximum Rating System (IEC 60134).
I
2
t
P
G(AV)
V
RGM
30
I
T(RMS)
(A)
25
003aad205
16
I
T(RMS)
(A)
12
003aad206
20
15
8
10
4
5
0
10
−2
10
−1
1
10
surge duration (s)
0
−50
0
50
100
150
T
mb
(°C)
Fig 2.
Fig 1.
RMS on-state current as a function of surge
duration; maximum values
RMS on-state current as a function of mounting
base temperature; maximum values
BT151-500RT_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 18 May 2009
3 of 11
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