NXP Semiconductors
Product data sheet
PNP general purpose transistors
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
PARAMETER
collector-base cut-off current
CONDITIONS
V
CB
=
−30
V; I
E
= 0
V
CB
=
−30
V; I
E
= 0;
T
j
= 150
°C
I
EBO
h
FE
emitter-base cut-off current
DC current gain
BC856
BC857
BC856A; BC857A
BC856B; BC857B; BC858B
BC857C
V
CEsat
collector-emitter saturation voltage
V
EB
=
−5
V; I
C
= 0
I
C
=
−2
mA; V
CE
=
−5
V
BC856; BC857; BC858
MIN.
−
−
−
125
125
125
220
420
TYP.
−1
−
−
−
−
−
−
−
−75
−250
−700
−850
−650
−
4.5
−
2
MAX.
−15
−4
−100
475
800
250
475
800
−300
−650
−
−
−750
−820
−
−
10
UNIT
nA
μA
nA
I
C
=
−10
mA; I
B
=
−0.5
mA
−
I
C
=
−100
mA; I
B
=
−5
mA;
−
note 1
mV
mV
mV
mV
mV
mV
pF
MHz
dB
V
BEsat
base-emitter saturation voltage
I
C
=
−10
mA; I
B
=
−0.5
mA
−
I
C
=
−100
mA; I
B
=
−5
mA;
−
note 1
V
BE
C
c
f
T
F
base-emitter voltage
collector capacitance
transition frequency
noise figure
I
C
=
−2
mA; V
CE
=
−5
V
I
C
=
−10
mA; V
CE
=
−5
V
V
CB
=
−10
V; I
E
= I
e
= 0;
f = 1 MHz
V
CE
=
−5
V; I
C
=
−10
mA;
f = 100 MHz
I
C
=
−200 μA;
V
CE
=
−5
V;
R
S
= 2 kΩ; f = 1 kHz;
B = 200 Hz
−600
−
−
100
−
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
2004 Jan 16
4
PHILIPS [ NXP SEMICONDUCTORS ]
