NXP Semiconductors
Product data sheet
PNP general purpose transistors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
V
CBO
BC856
BC857
BC858
V
CEO
collector-emitter voltage
BC856
BC857
BC858
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
in free air; note 1
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
PARAMETER
collector-base voltage
CONDITIONS
open emitter
BC856; BC857; BC858
MIN.
−
−
−
−
−
−
−
−
−
−
−
−65
−
−65
MAX.
−80
−50
−30
−65
−45
−30
−5
−100
−200
−200
250
+150
150
+150
V
V
V
V
V
V
V
UNIT
mA
mA
mA
mW
°C
°C
°C
TYPICAL
500
UNIT
K/W
2004 Jan 16
3
PHILIPS [ NXP SEMICONDUCTORS ]
