NXP Semiconductors
BC848 series
30 V, 100 mA NPN general-purpose transistors
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
I
CBO
Conditions
Min
-
-
-
-
200
110
-
Typ
-
-
-
150
290
-
90
200
700
900
660
-
-
2.5
2
Max
15
5
100
-
450
800
250
600
-
-
700
770
-
3
10
Unit
nA
μA
nA
collector-base cut-off V
CB
= 30 V; I
E
= 0 A
current
V
CB
= 30 V; I
E
= 0 A;
T
j
= 150
°C
emitter-base cut-off
current
DC current gain
V
EB
= 5 V; I
E
= 0 A
V
CE
= 5 V; I
C
= 10
μA
V
CE
= 5 V; I
C
= 2 mA
BC848B
BC848W
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
f
T
C
c
NF
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage
transition frequency
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 2 mA; V
CE
= 5 V
I
C
= 10 mA; V
CE
= 5 V
V
CE
= 5 V; I
C
= 10 mA;
f = 100 MHz
mV
mV
mV
mV
mV
mV
MHz
pF
dB
-
-
-
580
-
100
-
-
collector capacitance V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
noise figure
V
CE
= 5 V; I
C
= 200
μA;
R
S
= 2 kΩ; f = 1 kHz;
B = 200 Hz
[1]
[2]
[3]
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
V
BEsat
decreases by approximately 1.7 mV/K with increasing temperature.
V
BE
decreases by approximately 2 mV/K with increasing temperature.
BC848_SER_7
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 07 — 17 November 2009
4 of 12
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