NXP Semiconductors
BAS16 series
High-speed switching diodes
Thermal characteristics
…continued
Parameter
thermal resistance from
junction to solder point
BAS16H
BAS16J
BAS16T
BAS16VY
BAS316
BAS516
Table 7.
Symbol
R
th(j-sp)
Conditions
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
-
-
-
-
70
55
350
260
150
120
K/W
K/W
K/W
K/W
K/W
K/W
[1]
[2]
[3]
[4]
[5]
[6]
[7]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB with 60
µm
copper strip line.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Single diode loaded.
Soldering point of cathode tab.
Soldering points at pins 4, 5 and 6.
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
F
forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
I
R
reverse current
V
R
= 25 V
V
R
= 80 V
V
R
= 25 V; T
j
= 150
°C
V
R
= 80 V; T
j
= 150
°C
C
d
diode capacitance
BAS16; BAS16H;
BAS16J; BAS16L;
BAS16T; BAS16VV;
BAS16VY; BAS16W;
BAS316
BAS516
t
rr
V
FR
[1]
[2]
[3]
BAS16_SER_5
Parameter
Conditions
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
715
855
1
1.25
30
0.5
30
50
1.5
mV
mV
V
V
nA
µA
µA
µA
pF
f = 1 MHz; V
R
= 0 V
-
-
-
-
1
4
1.75
pF
ns
V
reverse recovery time
forward recovery voltage
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
-
-
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
When switched from I
F
= 10 mA; t
r
= 20 ns.
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 25 August 2008
6 of 20
PHILIPS [ NXP SEMICONDUCTORS ]
