NXP Semiconductors
BAS16 series
High-speed switching diodes
8. Test information
t
r
D.U.T.
R
S
= 50
Ω
V = V
R
+
I
F
×
R
S
I
F
SAMPLING
OSCILLOSCOPE
R
i
= 50
Ω
V
R
mga881
t
p
t
10 %
+
I
F
trr
t
90 %
input signal
output signal
(1)
(1) I
R
= 1 mA
Input signal: reverse pulse rise time t
r
= 0.6 ns; reverse voltage pulse duration t
p
= 100 ns; duty cycle
δ
= 0.05
Oscilloscope: rise time t
r
= 0.35 ns
Fig 5.
Reverse recovery time test circuit and waveforms
I
1 kΩ
450
Ω
I
90 %
V
R
S
= 50
Ω
D.U.T.
OSCILLOSCOPE
R
i
= 50
Ω
10 %
t
t
r
t
p
input signal
VFR
t
output signal
mga882
Input signal: forward pulse rise time t
r
= 20 ns; forward current pulse duration t
p
≥
100 ns; duty cycle
δ ≤
0.005
Fig 6.
Forward recovery voltage test circuit and waveforms
9. Package outline
1.7
1.5
1
3
3.0
2.8
1.1
0.9
1.2
1.0
0.45
0.15
2.5 1.4
2.1 1.2
3.6
3.4
2.7
2.5
0.55
0.35
1
2
1.9
Dimensions in mm
0.48
0.38
0.15
0.09
04-11-04
Dimensions in mm
2
0.70
0.55
0.25
0.10
04-11-29
Fig 7.
Package outline BAS16 (SOT23/TO-236AB)
Fig 8.
Package outline BAS16H (SOD123F)
BAS16_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 25 August 2008
8 of 20
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