Table 5. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1,2)
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 132 mA, P = 1.5 W Avg., f = 2170 MHz,
DD
DQ
out
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Power Gain
G
16.0
20.0
8.6
—
17.6
22.0
9.1
19.0
—
dB
%
ps
D
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
PAR
ACPR
IRL
—
dB
dBc
dB
--44.0
-- 1 4
--41.0
-- 9
—
Load Mismatch (In Freescale Test Fixture, 50 ohm system) I = 132 mA, f = 2140 MHz
DQ
(3)
VSWR 10:1 at 32 Vdc, 14 W CW Output Power
No Device Degradation
(3)
(3 dB Input Overdrive from 12 W CW
Rated Power)
Typical Performance (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 132 mA, 2110--2170 MHz Bandwidth
DD
DQ
(3,4)
P
@ 1 dB Compression Point, CW
P1dB
—
—
16.2
-- 1 6
—
—
W
out
AM/PM
(Maximum value measured at the P3dB compression point across
the 2110--2170 MHz frequency range.)
VBW Resonance Point
VBW
—
170
—
MHz
res
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 60 MHz Bandwidth @ P = 1.5 W Avg.
G
—
—
0.05
0.01
—
—
dB
out
F
Gain Variation over Temperature
G
dB/C
(--30C to +85C)
Output Power Variation over Temperature
(--30C to +85C)
P1dB
—
0.004
—
dB/C
(3)
1. Part internally matched on input.
2. Measurements made with device in straight lead configuration, before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4. Calculated from load pull P3dB measurements.
AFT20S015NR1 AFT20S015GNR1
RF Device Data
Freescale Semiconductor, Inc.
3
NXP [ NXP ]
