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AFT20S015NR1 参数 Datasheet PDF下载

AFT20S015NR1图片预览
型号: AFT20S015NR1
PDF下载: 下载PDF文件 查看货源
内容描述: [RF Power LDMOS Transistors]
分类和应用:
文件页数/大小: 18 页 / 827 K
品牌: NXP [ NXP ]
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Document Number: AFT20S015N  
Rev. 1, 11/2013  
Freescale Semiconductor  
Technical Data  
RF Power LDMOS Transistors  
N--Channel Enhancement--Mode Lateral MOSFETs  
AFT20S015NR1  
AFT20S015GNR1  
These 1.5 W RF power LDMOS transistors are designed for cellular base  
station applications covering the frequency range of 1805 to 2700 MHz.  
2100 MHz  
Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,  
DQ = 132 mA, Pout = 1.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01%  
Probability on CCDF.  
1805–2700 MHz, 1.5 W AVG., 28 V  
AIRFAST RF POWER LDMOS  
TRANSISTORS  
I
G
Output PAR  
(dB)  
ACPR  
(dBc)  
IRL  
(dB)  
ps  
D
Frequency  
2110 MHz  
2140 MHz  
2170 MHz  
(dB)  
17.5  
17.6  
17.6  
(%)  
22.0  
22.0  
22.0  
8.9  
9.0  
9.1  
--43.0  
--44.0  
--44.0  
-- 11  
-- 1 2  
-- 1 4  
T O -- 2 7 0 -- 2  
PLASTIC  
AFT20S015NR1  
1800 MHz  
Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,  
IDQ = 132 mA, Pout = 1.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01%  
Probability on CCDF.  
G
Output PAR  
(dB)  
ACPR  
(dBc)  
IRL  
(dB)  
ps  
D
Frequency  
1805 MHz  
1840 MHz  
1880 MHz  
(dB)  
18.0  
18.1  
18.0  
(%)  
21.0  
22.0  
22.0  
9.2  
9.2  
9.1  
--42.0  
--44.0  
--45.0  
-- 11  
-- 1 0  
-- 1 0  
T O -- 2 7 0 -- 2 G U L L  
PLASTIC  
AFT20S015GNR1  
2600 MHz  
Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,  
IDQ = 132 mA, Pout = 2.1 W Avg., Input Signal PAR = 9.9 dB @ 0.01%  
Probability on CCDF.  
G
Output PAR  
(dB)  
ACPR  
(dBc)  
IRL  
(dB)  
ps  
D
RF /V  
RF /V  
out DS  
in GS  
Frequency  
2300 MHz  
2400 MHz  
2500 MHz  
2600 MHz  
2700 MHz  
(dB)  
15.7  
16.0  
15.8  
15.8  
15.5  
(%)  
23.0  
23.0  
23.0  
21.0  
20.0  
9.0  
8.8  
8.6  
8.5  
8.4  
--45.0  
--44.0  
--43.0  
--43.0  
--42.0  
-- 6  
-- 7  
-- 6  
-- 7  
-- 8  
(Top View)  
Note: The backside of the package is the  
source terminal for the transistor.  
Features  
Figure 1. Pin Connections  
Greater Negative Gate--Source Voltage Range for Improved Class C  
Operation  
Designed for Digital Predistortion Error Correction Systems  
Optimized for Doherty Applications  
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel.  
Freescale Semiconductor, Inc., 2013. All rights reserved.