Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Vdc
C
Drain--Source Voltage
V
--0.5, +65
--6.0, +10
32, +0
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature Range
T
stg
--65 to +150
--40 to +150
--40 to +225
T
C
C
(1,2)
Operating Junction Temperature Range
T
J
C
CW Operation @ T = 25C
CW
11
W
C
Derate above 25C
0.1
W/C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
4.2
C/W
JC
Case Temperature 77C, 1.5 W CW, 28 Vdc, I = 132 mA, 2140 MHz
DQ
Table 3. ESD Protection Characteristics
Test Methodology
Class
1C
A
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
IV
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
C
Table 5. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
Adc
Adc
Adc
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
I
1
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 17.6 Adc)
V
V
1.5
2.4
0.1
2.0
3.0
0.2
2.5
3.4
0.3
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 132 mAdc, Measured in Functional Test)
DD
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 176 Adc)
V
GS
D
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
(continued)
AFT20S015NR1 AFT20S015GNR1
RF Device Data
Freescale Semiconductor, Inc.
2
NXP [ NXP ]
