Philips Semiconductors
Product specification
Quad 2-input AND gate
74HC08; 74HCT08
handbook, halfpage
A
A
handbook, halfpage
Y
Y
B
B
MNB037
MNA221
Fig.5 HC logic diagram (one gate).
Fig.6 HCT logic diagram (one gate).
RECOMMENDED OPERATING CONDITIONS
74HC08
74HCT08
SYMBOL
PARAMETER
CONDITIONS
UNIT
MIN.
2.0
TYP. MAX. MIN. TYP. MAX.
VCC
VI
supply voltage
input voltage
output voltage
5.0
−
6.0
4.5
0
5.0
−
5.5
V
0
VCC
VCC
VCC
VCC
V
V
VO
0
−
0
−
Tamb
ambient
temperature
see DC and AC
characteristics per device
−40
+25
+125 −40
+25
+125 °C
tr, tf
input rise and fall VCC = 2.0 V
−
−
−
−
1000
500
−
−
−
−
−
ns
ns
ns
times
VCC = 4.5 V
6.0
−
6.0
−
500
−
VCC = 6.0 V
400
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
supply voltage
CONDITIONS
MIN.
−0.5
MAX.
+7.0
UNIT
VCC
IIK
V
input diode current
VI < −0.5 V or VI > VCC + 0.5 V
VO < −0.5 V or VO > VCC + 0.5 V
−0.5 V < VO < VCC + 0.5 V
−
±20
±20
±25
±50
+150
mA
mA
mA
mA
°C
IOK
IO
output diode current
−
output source or sink current
−
I
CC, IGND VCC or GND current
−
Tstg
Ptot
storage temperature
power dissipation
DIP14 package
−65
T
amb = −40 to +125 °C; note 1
amb = −40 to +125 °C; note 2
−
−
750
500
mW
mW
other packages
T
Notes
1. For DIP14 packages: above 70 °C derate linearly with 12 mW/K.
2. For SO14 packages: above 70 °C derate linearly with 8 mW/K.
For SSOP14 and TSSOP14 packages: above 60 °C derate linearly with 5.5 mW/K.
For DHVQFN14 packages: above 60 °C derate linearly with 4.5 mW/K.
2003 Jul 25
5
NXP [ NXP ]
