Philips Semiconductors
Product specification
2-input AND gate
FEATURES
•
Symmetrical output impedance
•
High noise immunity
•
ESD protection:
– HBM EIA/JESD22-A114-A exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V
– CDM EIA/JESD22-C101 exceeds 1000 V.
•
Low power dissipation
•
Balanced propagation delays
•
Very small 5-pin package
•
Output capability: standard
•
Specified from
−40
to +125
°C.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°C;
t
r
= t
f
≤
3.0 ns.
74AHC1G08; 74AHCT1G08
DESCRIPTION
The 74AHC1G/AHCT1G08 is a high-speed Si-gate CMOS
device.
The 74AHC1G/AHCT1G08 provides the 2-input AND
function.
TYPICAL
SYMBOL
t
PHL
/t
PLH
C
I
C
PD
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
+ (C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts.
2. The condition is V
I
= GND to V
CC
.
PARAMETER
propagation delay A and B to Y
input capacitance
power dissipation capacitance
C
L
= 50 pF; f = 1 MHz;
notes 1 and 2
CONDITIONS
AHC1G
C
L
= 15 pF; V
CC
= 5 V
3.2
1.5
17
AHCT1G
3.6
1.5
19
ns
pF
pF
UNIT
2002 Jun 06
2
PHILIPS [ NXP SEMICONDUCTORS ]
