NXP Semiconductors
Product data sheet
Schottky barrier diode
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
see Fig.2;
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 200 mA
I
R
C
d
Note
1. Pulse test: t
p
= 300
μs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SC-79 (SOD523) standard mounting conditions.
PARAMETER
thermal resistance from junction to
ambient
note 1
CONDITIONS
VALUE
450
continuous reverse current
diode capacitance
V
R
= 10 V; note 1; see Fig.3
V
R
= 1 V; f = 1 MHz; see Fig.4
130
190
255
355
420
2.5
20
MIN.
1PS79SB31
MAX.
190
250
300
410
500
30
25
UNIT
mV
mV
mV
mV
mV
μA
pF
UNIT
K/W
2002 Jan 11
3
PHILIPS [ NXP SEMICONDUCTORS ]
