NXP Semiconductors
Product data sheet
Schottky barrier diode
FEATURES
•
Very low forward voltage
•
Guard ring protected
•
Ultra small SMD package.
APPLICATIONS
•
Ultra high-speed switching
•
Voltage clamping
•
Protection circuits
•
Low current rectification
•
Low power consumption applications (e.g. hand-held
devices).
DESCRIPTION
Planar Schottky barrier diode in a SOD523 (SC-79) ultra
small SMD plastic package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
T
amb
PARAMETER
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
t
p
≤
1 s;
δ ≤
0.5
t = 8.3 ms half sine wave;
JEDEC method
CONDITIONS
−
−
−
−
−65
−
−65
MIN.
1PS79SB31
handbook, halfpage
Marking code:
G3.
The marking bar indicates the cathode.
;
k
Top view
a
MAM403
Fig.1
Simplified outline SOD523 (SC-79) and
symbol.
MAX.
30
200
300
1 000
+150
125
+125
V
UNIT
mA
mA
mA
°C
°C
°C
2002 Jan 11
2
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