Philips Semiconductors
Product specification
Schottky barrier diode
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
see Fig.2
I
F
= 0.1 mA
I
F
= 1 mA
I
R
continuous reverse current
see Fig.3
V
R
= 1 V
V
R
= 5 V; note 1
C
d
L
S
Note
1. Pulse test: pulse width = 300
µs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60
µm
copper strip line.
Soldering
Reflow soldering is the only recommended soldering method.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
diode capacitance
series inductance
V
R
= 0 V; f = 1 MHz; see Fig.4
0.4
−
0.35
0.6
160
240
TYP.
1PS10SB63
MAX.
200
300
1
50
0.5
−
UNIT
mV
mV
µA
µA
pF
nH
VALUE
500
UNIT
K/W
2003 Aug 20
3
PHILIPS [ NXP SEMICONDUCTORS ]
