Philips Semiconductors
Product specification
Schottky barrier diode
FEATURES
•
Very low diode capacitance
•
Low forward voltage
•
Leadless ultra small plastic package
(1.0 mm
×
0.6 mm
×
0.5 mm)
•
Boardspace 1.17 mm
2
(approx. 10% of SOT23)
•
Power dissipation comparable to SOT23.
APPLICATIONS
•
Ultra high-speed switching
•
High frequency detection
•
Zero bias detection
•
Mobile communication, digital (still) cameras, PDA’s and
PCMCIA cards.
Marking code:
S4.
The marking bar indicates the cathode.
Bottom view
handbook, halfpage
1PS10SB63
DESCRIPTION
An epitaxial Schottky barrier diode encapsulated in a
SOD882 leadless ultra small plastic package.
ESD sensitive device, observe handling precautions.
MDB391
Fig.1 Simplified outline (SOD882), pin
configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
PARAMETER
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
t
p
≤
1 ms;
δ
= 0.25
t
p
= 8.3 ms half sinewave;
JEDEC method
CONDITIONS
−
−
−
−
−65
−
MIN.
5
20
400
550
+150
150
MAX.
V
mA
mA
mA
°C
°C
UNIT
2003 Aug 20
2
PHILIPS [ NXP SEMICONDUCTORS ]
