Table 1. Maximum Ratings
Rating
Symbol
Value
-0.5, +65
-0.5, +12
- 65 to +150
150
Unit
Vdc
Vdc
°C
Drain-Source Voltage
Gate-Source Voltage
Storage Temperature Range
Operating Junction Temperature
Input Power
V
DSS
V
GS
T
stg
T
°C
J
P
12
dBm
in
Table 2. Thermal Characteristics
(1)
Characteristic
Thermal Resistance, Junction to Case
Symbol
Value
Unit
R
θ
JC
°C/W
Driver Application
(P = 23 dBm CW)
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
= 164 mA
= 115 mA
9.3
3.5
DQ1
DQ2
out
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
0 (Minimum)
A (Minimum)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
W-CDMA Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I
= 164 mA, I
= 115 mA, P = 23 dBm,
out
DD
DQ1
DQ2
f = 2140 MHz, Single-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz
Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
G
23
—
24
27
dB
dB
ps
Gain Flatness in 60 MHz Bandwidth @ P = 23 dBm
G
0.3
0.5
out
F
f = 2110-2170 MHz
Adjacent Channel Power Ratio
Input Return Loss
ACPR
IRL
—
-56
-12
-54
-10
dBc
dB
—
Typical N-CDMA Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I
= 164 mA, I = 115 mA, P = 23 dBm,
DQ2 out
DD
DQ1
f = 1960 MHz, Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth
885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF
@
Power Gain
G
25.5
—
27.5
0.3
29
—
—
—
—
dB
dB
dBc
dB
°
ps
Gain Flatness @ P = 23 dBm
f = 1930-1990 MHz
G
F
out
Adjacent Channel Power Ratio
Input Return Loss
ACPR
IRL
Φ
—
-60
-12
0.2
—
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ P = 23 dBm
—
out
Average Group Delay @ P = 23 dBm Including Output Matching
Delay
—
1.5
—
ns
out
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
MHV5IC2215NR2
RF Device Data
Freescale Semiconductor
2
NXP [ NXP ]
