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06035J6R8BBS 参数 Datasheet PDF下载

06035J6R8BBS图片预览
型号: 06035J6R8BBS
PDF下载: 下载PDF文件 查看货源
内容描述: [RF LDMOS Wideband Integrated Power Amplifier]
分类和应用:
文件页数/大小: 19 页 / 904 K
品牌: NXP [ NXP ]
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Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
-0.5, +65  
-0.5, +12  
- 65 to +150  
150  
Unit  
Vdc  
Vdc  
°C  
Drain-Source Voltage  
Gate-Source Voltage  
Storage Temperature Range  
Operating Junction Temperature  
Input Power  
V
DSS  
V
GS  
T
stg  
T
°C  
J
P
12  
dBm  
in  
Table 2. Thermal Characteristics  
(1)  
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Value  
Unit  
R
θ
JC  
°C/W  
Driver Application  
(P = 23 dBm CW)  
Stage 1, 28 Vdc, I  
Stage 2, 28 Vdc, I  
= 164 mA  
= 115 mA  
9.3  
3.5  
DQ1  
DQ2  
out  
Table 3. ESD Protection Characteristics  
Test Methodology  
Class  
Human Body Model (per JESD22-A114)  
Machine Model (per EIA/JESD22-A115)  
Charge Device Model (per JESD22-C101)  
0 (Minimum)  
A (Minimum)  
III (Minimum)  
Table 4. Moisture Sensitivity Level  
Test Methodology  
Rating  
Package Peak Temperature  
Unit  
Per JESD 22-A113, IPC/JEDEC J-STD-020  
3
260  
°C  
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
W-CDMA Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I  
= 164 mA, I  
= 115 mA, P = 23 dBm,  
out  
DD  
DQ1  
DQ2  
f = 2140 MHz, Single-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz  
Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.  
Power Gain  
G
23  
24  
27  
dB  
dB  
ps  
Gain Flatness in 60 MHz Bandwidth @ P = 23 dBm  
G
0.3  
0.5  
out  
F
f = 2110-2170 MHz  
Adjacent Channel Power Ratio  
Input Return Loss  
ACPR  
IRL  
-56  
-12  
-54  
-10  
dBc  
dB  
Typical N-CDMA Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I  
= 164 mA, I = 115 mA, P = 23 dBm,  
DQ2 out  
DD  
DQ1  
f = 1960 MHz, Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth  
885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF  
@
Power Gain  
G
25.5  
27.5  
0.3  
29  
dB  
dB  
dBc  
dB  
°
ps  
Gain Flatness @ P = 23 dBm  
f = 1930-1990 MHz  
G
F
out  
Adjacent Channel Power Ratio  
Input Return Loss  
ACPR  
IRL  
Φ
-60  
-12  
0.2  
Average Deviation from Linear Phase in 60 MHz Bandwidth  
@ P = 23 dBm  
out  
Average Group Delay @ P = 23 dBm Including Output Matching  
Delay  
1.5  
ns  
out  
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes - AN1955.  
MHV5IC2215NR2  
RF Device Data  
Freescale Semiconductor  
2