Document Number: MHV5IC2215N
Rev. 3, 1/2007
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifier
The MHV5IC2215NR2 wideband integrated circuit is designed for base
station applications. It uses Freescale’s High Voltage (28 Volts) LDMOS IC
technology and integrates a two-stage structure. Its wideband on-chip
matching design makes it usable from 1500 to 2200 MHz. The linearity
performances cover all modulation formats for cellular applications including
TD-SCDMA.
MHV5IC2215NR2
2170 MHz, 23 dBm, 28 V
SINGLE N-CDMA, SINGLE W-CDMA
RF LDMOS WIDEBAND
Driver Application
• Typical Single-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ1
=
164 mA, IDQ2 = 115 mA, Pout = 23 dBm, Full Frequency Band (1930-
1990 MHz), IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through
13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01%
Probability on CCDF.
INTEGRATED POWER AMPLIFIER
Power Gain — 27.5 dB
ACPR @ 885 kHz Offset — -60 dBc in 30 kHz Bandwidth
16
• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1
=
1
164 mA, IDQ2 = 115 mA, Pout = 23 dBm, Full Frequency Band (2130-
2170 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01%
Probability on CCDF.
CASE 978-03
PFP-16
Power Gain — 24 dB
ACPR @ 5 MHz Offset — -55 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 15 Watts CW
Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source Scattering Parameters
Features
• On-Chip Matching (50 Ohm Input, >5 Ohm Output)
• Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
• On-Chip Current Mirror gm Reference FET for Self Biasing Application (1)
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel
V
V
RD1
N.C.
1
2
3
4
N.C.
V
16
15
14
13
RG1
/RF
/RF
/RF
/RF
/RF
V
DS2
out
out
out
out
out
RD1
RG1
V
V
V
V
V
DS2
DS2
DS2
DS2
V
DS1
2 Stage IC
V
DS1
GND
5
6
7
8
12
11
10
9
RF
V
/RF
DS2 out
in
RF
in
V
V
/RF
DS2 out
GS1
N.C.
V
GS2
V
V
GS1
GS2
Quiescent Current
Temperature Compensation
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
MHV5IC2215NR2
RF Device Data
Freescale Semiconductor
1
NXP [ NXP ]
