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06035J6R8BBS 参数 Datasheet PDF下载

06035J6R8BBS图片预览
型号: 06035J6R8BBS
PDF下载: 下载PDF文件 查看货源
内容描述: [RF LDMOS Wideband Integrated Power Amplifier]
分类和应用:
文件页数/大小: 19 页 / 904 K
品牌: NXP [ NXP ]
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PACKAGE DIMENSIONS  
h X 45  
A
D
_
E2  
1
16  
NOTES:  
1. CONTROLLING DIMENSION: MILLIMETER.  
2. DIMENSIONS AND TOLERANCES PER ASME  
Y14.5M, 1994.  
3. DATUM PLANE H− IS LOCATED AT BOTTOM OF  
LEAD AND IS COINCIDENT WITH THE LEAD  
WHERE THE LEAD EXITS THE PLASTIC BODY AT  
THE BOTTOM OF THE PARTING LINE.  
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD  
PROTRUSION. ALLOWABLE PROTRUSION IS  
0.250 PER SIDE. DIMENSIONS D AND E1 DO  
INCLUDE MOLD MISMATCH AND ARE  
DETERMINED AT DATUM PLANE H−.  
5. DIMENSION b DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE  
b DIMENSION AT MAXIMUM MATERIAL  
CONDITION.  
D1  
8
9
E1  
B
BOTTOM VIEW  
b1  
8X E  
M
S
C B  
bbb  
6. DATUMS A− AND −B− TO BE DETERMINED AT  
DATUM PLANE H−.  
Y
MILLIMETERS  
c
c1  
DIM MIN  
2.000  
A1 0.025  
A2 1.950  
6.950  
D1 4.372  
8.850  
E1 6.950  
E2 4.372  
MAX  
2.300  
0.100  
2.100  
7.100  
5.180  
9.150  
7.100  
5.180  
0.720  
A2  
A
A
b
DATUM  
PLANE  
H
SEATING  
PLANE  
M
S
C A  
aaa  
D
C
E
SECT W-W  
L
L1  
b
0.466  
0.250 BSC  
0.300  
0.432  
0.375  
0.279  
0.230  
b1 0.300  
0.180  
c1 0.180  
ccc C  
c
q
W
GAUGE  
PLANE  
e
h
0.800 BSC  
W
− − −  
0
0.200  
0.200  
0.100  
0.600  
7
q
_
_
L
A1  
aaa  
bbb  
ccc  
1.000  
0.039  
DETAIL Y  
CASE 978-03  
ISSUE C  
PFP-16  
MHV5IC2215NR2  
RF Device Data  
Freescale Semiconductor  
17  
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