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06035J6R8BBS 参数 Datasheet PDF下载

06035J6R8BBS图片预览
型号: 06035J6R8BBS
PDF下载: 下载PDF文件 查看货源
内容描述: [RF LDMOS Wideband Integrated Power Amplifier]
分类和应用:
文件页数/大小: 19 页 / 904 K
品牌: NXP [ NXP ]
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Z = 50 Ω  
o
Z
in  
f = 1930 MHz  
f = 1990 MHz  
f = 1930 MHz  
f = 1990 MHz  
Z
load  
V
= 28 Vdc, I  
= 164 mA, I = 115 mA, P = 23 dBm  
DQ2 out  
DD  
DQ1  
f
Z
Z
load  
in  
MHz  
Ω
Ω
1930  
1960  
1990  
45.98 + j19.10  
53.88 + j20.43  
62.55 + j18.70  
2.18 - j0.88  
2.15 - j1.18  
2.12 - j1.49  
Z
=
Device input impedance as measured from  
gate to ground.  
in  
Z
=
Test circuit impedance as measured  
from drain to ground.  
load  
Output  
Matching  
Network  
Device  
Under Test  
Z
Z
in  
load  
Figure 17. Series Equivalent Input and Load Impedance, 1960 MHz  
MHV5IC2215NR2  
RF Device Data  
Freescale Semiconductor  
11