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06035J6R8BBS 参数 Datasheet PDF下载

06035J6R8BBS图片预览
型号: 06035J6R8BBS
PDF下载: 下载PDF文件 查看货源
内容描述: [RF LDMOS Wideband Integrated Power Amplifier]
分类和应用:
文件页数/大小: 19 页 / 904 K
品牌: NXP [ NXP ]
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Z = 50 Ω  
o
f = 2010 MHz  
f = 2024 MHz  
Z
in  
f = 2010 MHz  
f = 2024 MHz  
Z
load  
V
= 28 Vdc, I  
= 140 mA, I  
= 125 mA  
DD  
DQ1  
DQ2  
f
Z
W
Z
load  
W
in  
MHz  
2010  
2017  
2024  
65.31 + j15.57  
67.01 + j14.27  
68.60 + j12.82  
1.34 - j1.00  
1.36 - j1.17  
1.39 - j1.30  
Z
Z
=
Device input impedance as measured from  
gate to ground.  
in  
=
Test circuit impedance as measured  
from drain to ground.  
load  
Output  
Matching  
Network  
Device  
Under Test  
Z
Z
in  
load  
Figure 24. Series Equivalent Input and Load Impedance — TD-SCDMA  
MHV5IC2215NR2  
RF Device Data  
Freescale Semiconductor  
16  
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