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NAND01GW3B2CZA6T 参数 Datasheet PDF下载

NAND01GW3B2CZA6T图片预览
型号: NAND01GW3B2CZA6T
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 128MX8, 35ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 60 页 / 1343 K
品牌: NUMONYX [ NUMONYX B.V ]
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NAND01G-B2B, NAND02G-B2C  
Revision history  
14  
Revision history  
Table 30. Document revision history  
Date  
Version  
Changes  
18-May-2006  
01-Jun-2006  
0.1  
1
Initial release.  
Document status changed to preliminary data.  
VFBGA63 9 x 11 x 1 mm package added for NAND01G-B2B devices  
and VFBGA63 9.5 x 12 x 1 mm dedicated to NAND02G-B2C devices.  
09-Jun-2006  
23-Nov-2006  
2
3
Note 2 below Commands removed.  
Overview of Section 6.1: Read memory array updated. Paragraph  
concerning Exit Cache Read command updated in Section 6.2: Cache  
read. Block replacement section replaced by Section 8.2: NAND flash  
memory failure modes.  
tWHALL added in Table 24: AC characteristics for command, address,  
data input.  
RB waveform updated in Figure 25: Page read operation AC  
waveforms, and CL waveform modified in Figure 26: Page program AC  
waveforms.  
An error correction code (ECC) is required to obtain a data integrity of  
100 000 program/erase cycles per block.  
Section 3.9: Ready/Busy (RB) modified.  
tRHRL2 timing removed from Figure 9: Page program operation and  
Table 25: AC characteristics for operations.  
20-Apr-2007  
14-Apr-2008  
4
5
Note removed below Figure 11: Copy back program.  
tWHBH2 replaced by tBLBH5, cash busy time, in Section 6.5: Cache  
program.  
Alt. symbol for tBLBH4 is tRST in Table 25: AC characteristics for  
operations.  
Applied Numonyx branding.  
59/60  
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