欢迎访问ic37.com |
会员登录 免费注册
发布采购

NAND01GW3B2CZA6T 参数 Datasheet PDF下载

NAND01GW3B2CZA6T图片预览
型号: NAND01GW3B2CZA6T
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 128MX8, 35ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 60 页 / 1343 K
品牌: NUMONYX [ NUMONYX B.V ]
 浏览型号NAND01GW3B2CZA6T的Datasheet PDF文件第48页浏览型号NAND01GW3B2CZA6T的Datasheet PDF文件第49页浏览型号NAND01GW3B2CZA6T的Datasheet PDF文件第50页浏览型号NAND01GW3B2CZA6T的Datasheet PDF文件第51页浏览型号NAND01GW3B2CZA6T的Datasheet PDF文件第53页浏览型号NAND01GW3B2CZA6T的Datasheet PDF文件第54页浏览型号NAND01GW3B2CZA6T的Datasheet PDF文件第55页浏览型号NAND01GW3B2CZA6T的Datasheet PDF文件第56页  
DC and AC parameters  
NAND01G-B2B, NAND02G-B2C  
Figure 29. Program/erase enable waveforms  
W
tVHWH  
WP  
RB  
I/O  
80h  
10h  
ai12477  
Figure 30. Program/erase disable waveforms  
W
tVLWH  
WP  
High  
RB  
I/O  
80h  
10h  
ai12478  
11.1  
Ready/Busy signal electrical characteristics  
Figure 32, Figure 31 and Figure 33 show the electrical characteristics for the Ready/Busy  
signal. The value required for the resistor R can be calculated using the following equation:  
P
(
)
V
V
DDmax  
OLmax  
+ I  
R min= -------------------------------------------------------------  
P
I
L
OL  
So,  
1.85V  
R min(1.8V)= ---------------------------  
P
+
3mA  
I
L
3.2V  
R min(3V)= ---------------------------  
P
+
8mA  
I
L
where I is the sum of the input currents of all the devices tied to the Ready/Busy signal. R  
L
P
max is determined by the maximum value of t .  
r
52/60  
 复制成功!