欢迎访问ic37.com |
会员登录 免费注册
发布采购

M29W128GH70N6E 参数 Datasheet PDF下载

M29W128GH70N6E图片预览
型号: M29W128GH70N6E
PDF下载: 下载PDF文件 查看货源
内容描述: 128兆位( Mb的16 ×8或8MB ×16 ,页,均匀的块) 3 V电源闪存 [128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply Flash memory]
分类和应用: 闪存
文件页数/大小: 94 页 / 1789 K
品牌: NUMONYX [ NUMONYX B.V ]
 浏览型号M29W128GH70N6E的Datasheet PDF文件第10页浏览型号M29W128GH70N6E的Datasheet PDF文件第11页浏览型号M29W128GH70N6E的Datasheet PDF文件第12页浏览型号M29W128GH70N6E的Datasheet PDF文件第13页浏览型号M29W128GH70N6E的Datasheet PDF文件第15页浏览型号M29W128GH70N6E的Datasheet PDF文件第16页浏览型号M29W128GH70N6E的Datasheet PDF文件第17页浏览型号M29W128GH70N6E的Datasheet PDF文件第18页  
Signal descriptions  
M29W128GH, M29W128GL  
2.7  
Write Enable (W)  
The Write Enable pin, W, controls the Bus Write operation of the memory’s command  
interface.  
2.8  
VPP/Write Protect (VPP/WP)  
The V /Write Protect pin provides two functions. The V  
function allows the memory to  
PP  
PPH  
use an external high voltage power supply to reduce the time required for program  
operations. This is achieved by bypassing the unlock cycles.  
The Write Protect function provides a hardware method of protecting the highest or lowest  
block (see Section 1: Description). When V /Write Protect is Low, V , the highest or lowest  
PP  
IL  
block is protected. Program and Erase operations on this block are ignored while V /Write  
PP  
Protect is Low.  
When V /Write Protect is High, V , the memory reverts to the previous protection status  
PP  
IH  
of the highest or lowest block. Program and Erase operations can now modify the data in  
this block unless the block is protected using Block protection.  
When V /Write Protect is raised to V  
the memory automatically enters the Unlock  
PP  
PPH  
Bypass mode (see Section 6.2.6).  
When V /Write Protect is raised to V  
, the execution time of the command is lower (see  
PPH  
PP  
Table 17: Program, Erase times and Program, Erase endurance cycles).  
When V /Write Protect returns to V or V normal operation resumes. During Unlock  
PP  
IH  
IL  
Bypass Program operations the memory draws I from the pin to supply the programming  
PP  
circuits. See the description of the Unlock Bypass command in the command interface  
section. The transitions from V to V  
and from V  
to V must be slower than t  
IH  
PPH  
PPH IH VHVPP  
(see Figure 23: Accelerated program timing waveforms).  
Never raise V /Write Protect to V from any mode except Read mode, otherwise the  
PP  
PPH  
memory may be left in an indeterminate state. A 0.1 µF capacitor should be connected  
between the VPP/Write Protect pin and the V ground pin to decouple the current surges  
SS  
from the power supply. The PCB track widths must be sufficient to carry the currents  
required during Unlock Bypass Program (see I  
, I  
, I  
, I  
in Table 25: DC  
PP1 PP2 PP3 PP4  
characteristics).  
The V /Write Protect pin may be left floating or unconnected because it features an  
PP  
internal pull-up.  
Refer to Table 3 for a summary of V /WP functions.  
PP  
Table 3.  
V
/WP functions  
PP  
VPP/WP  
Function  
Highest block protected on M29W128GH.  
Lowest block protected on M29W128GL.  
VIL  
VIH  
Highest and lowest block unprotected unless a software protection is  
activated (see Section 4: Hardware protection).  
Unlock bypass mode. It supplies the current needed to speed up  
programming.  
VPPH  
14/94