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M25PX64SOVME6TG 参数 Datasheet PDF下载

M25PX64SOVME6TG图片预览
型号: M25PX64SOVME6TG
PDF下载: 下载PDF文件 查看货源
内容描述: [EEPROM, 8MX8, Serial, CMOS, PDSO8, 8 X 6 MM, ROHS COMPLIANT, VDFPN-8]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
文件页数/大小: 68 页 / 1429 K
品牌: NUMONYX [ NUMONYX B.V ]
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Initial delivery state  
M25PX64  
Figure 28. Power-up timing  
V
CC  
V
(max)  
CC  
Program, erase and write commands are rejected by the device  
Chip selection not allowed  
V
(min)  
CC  
tVSL  
Read access allowed  
Device fully  
accessible  
Reset state  
of the  
device  
V
WI  
tPUW  
time  
AI04009C  
Table 11.  
Symbol  
Power-up timing and VWI threshold  
Parameter  
Min  
Max  
Unit  
(1)  
tVSL  
VCC(min) to S Low  
30  
1
μs  
ms  
V
(1)  
tPUW  
Time delay to write instruction  
Write inhibit voltage  
10  
(1)  
VWI  
1.5  
2.5  
1. These parameters are characterized only.  
8
Initial delivery state  
The device is delivered with the memory array erased: all bits are set to ‘1’ (each byte  
contains FFh). The status register contains 00h (all status register bits are 0).  
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