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M25P80-VMP6TG 参数 Datasheet PDF下载

M25P80-VMP6TG图片预览
型号: M25P80-VMP6TG
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位,低电压,串行闪存与75 MHz的SPI总线接口 [8 Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface]
分类和应用: 闪存存储内存集成电路时钟
文件页数/大小: 52 页 / 995 K
品牌: NUMONYX [ NUMONYX B.V ]
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M25P80  
DC and AC parameters  
Table 15. AC characteristics (75 MHz operation, Grade 6) (continued)  
75 MHz available only for products made in T9HX technology, identified with Process digit “4”(1)  
Test conditions specified in Table 10 and Table 12  
Symbol  
Alt.  
Parameter  
Min.  
Typ.(2)  
Max. Unit  
Page Program cycle time (256 byte)  
0.64  
0.01  
Page Program cycle time (n bytes, where n = 1 to 4)  
(7)  
tPP  
5
ms  
Page Program cycle time (n bytes, where n = 5 to  
256)  
int(n/8) × 0.02(8)  
tSE  
tBE  
Sector erase cycle time  
Bulk erase cycle time  
0.6  
8
3
s
s
20  
1. Details of how to find the Technology Process in the marking are given in AN1995, see also Section 12: Part numbering.  
2. Typical values given for TA = 25°C.  
3. tCH + tCL must be greater than or equal to 1/ fC  
4. Value guaranteed by characterization, not 100% tested in production.  
5. Expressed as a slew-rate.  
6. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.  
7. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are obtained with one  
sequence including all the bytes versus several sequences of only a few bytes. (1 n 256)  
8. int(A) corresponds to the upper integer part of A. E.g. int(12/8) = 2, int(32/8) = 4 int(15.3) =16.  
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