DC and AC parameters
M25P128
7. When using the Page Program (PP) instruction to program consecutive Bytes, optimized timings are
obtained with one sequence including all the Bytes versus several sequences of only a few Bytes. If only a
single byte is programmed, the estimated programming time is close to the time needed to program a full
page of 256 Bytes. Therefore, it is highly recommended to use the Page Program (PP) instruction with a
sequence of 256 consecutive Bytes. (1 ≤ n ≤ 256)
8. int(A) corresponds to the upper integer part of A. For example int(12/8) = 2, int(32/8) = 4, int(15.3) = 16.
Table 16. DC characteristics for 130 nm devices
Test condition
Symbol
Parameter
Min.
Max.
Unit
(in addition to those in
Table 11)
ILI
ILO
Input Leakage Current
Output Leakage Current
Standby Current
± 2
± 2
µA
µA
µA
ICC1
S = VCC, VIN = VSS or VCC
100
C = 0.1VCC / 0.9.VCC at
50MHz,
8
4
mA
mA
Q = open
ICC3
Operating Current (READ)
C = 0.1VCC / 0.9.VCC at
20MHz,
Q = open
ICC4
ICC5
ICC6
ICC7
Operating Current (PP)
Operating Current (WRSR)
Operating Current (SE)
Operating Current (BE)
S = VCC
S = VCC
S = VCC
S = VCC
20
20
20
20
mA
mA
mA
mA
Operating current for Fast
Program/Erase mode
(1)
ICCPP
S = VCC, VPP = VPPH
S = VCC, VPP = VPPH
20
mA
mA
VPP Operating current in
Fast Program/Erase mode
(2)
IPP
20
VIL
VIH
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
– 0.5
0.3VCC
V
V
V
V
0.7VCC VCC+0.2
VOL
VOH
IOL = 1.6mA
0.4
IOH = –100μA
VCC–0.2
1. Characterized only.
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