DC and AC parameters
M25P128
(1)
Table 14. DC characteristics for 65 nm devices
Test condition
Symbol
Parameter
Min.
Max.
Unit
(in addition to those in Table 11)
ILI
ILO
Input Leakage Current
Output Leakage Current
Standby Current
± 2
± 2
µA
µA
µA
ICC1
S = VCC, VIN = VSS or VCC
100
C = 0.1VCC / 0.9.VCC at 54 MHz,
Q = open
6
mA
ICC3
Operating Current (READ)
Operating Current (PP)
C = 0.1VCC / 0.9.VCC at 33 MHz,
Q = open
4
mA
mA
mA
ICC4
ICC5
S = VCC
S = VCC
20
20
Operating Current
(WRSR)
ICC6
ICC7
Operating Current (SE)
Operating Current (BE)
S = VCC
S = VCC
20
20
mA
mA
Operating current for Fast
Program/Erase mode
(2)
ICCPP
S = VCC, VPP = VPPH
S = VCC, VPP = VPPH
20
mA
mA
VPP Operating current in
Fast Program/Erase mode
(2)
IPP
20
VIL
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
– 0.5
0.3 VCC
V
V
V
V
VIH
VOL
VOH
0.7 VCC VCC+0.4
0.4
IOL = 1.6 mA
IOH = –100 μA
VCC–0.2
1. 65 nm process technology devices are identified by the process identification digit ‘A’ in the device marking
and process letter "B" in the part number.
2. Characterized only.
(1)
Table 15. AC characteristics for 65 nm devices
Test conditions specified in Table 11 and Table 12
Symbol
Alt.
Parameter
Min.
Typ.
Max.
Unit
Clock frequency for the following
fC
fR
fC
instructions: FAST_READ, PP, SE, BE,
WREN, WRDI, RDID, RDSR, WRSR
D.C.
54
33
MHz
Clock frequency for READ instructions
D.C.
9
MHz
ns
(2)
tCH
tCLH Clock High Time
tCLL Clock Low Time
(2)
tCL
9
ns
(3)
tCLCH
Clock Rise Time(4) (peak to peak)
0.1
0.1
4
V/ns
V/ns
ns
(3)
tCHCL
Clock Fall Time(3) (peak to peak)
tCSS S Active Setup Time (relative to C)
S Not Active Hold Time (relative to C)
tSLCH
tCHSL
4
ns
36/47
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