欢迎访问ic37.com |
会员登录 免费注册
发布采购

JS28F256J3F105A 参数 Datasheet PDF下载

JS28F256J3F105A图片预览
型号: JS28F256J3F105A
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 16MX16, 105ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56]
分类和应用: 光电二极管
文件页数/大小: 66 页 / 711 K
品牌: NUMONYX [ NUMONYX B.V ]
 浏览型号JS28F256J3F105A的Datasheet PDF文件第39页浏览型号JS28F256J3F105A的Datasheet PDF文件第40页浏览型号JS28F256J3F105A的Datasheet PDF文件第41页浏览型号JS28F256J3F105A的Datasheet PDF文件第42页浏览型号JS28F256J3F105A的Datasheet PDF文件第44页浏览型号JS28F256J3F105A的Datasheet PDF文件第45页浏览型号JS28F256J3F105A的Datasheet PDF文件第46页浏览型号JS28F256J3F105A的Datasheet PDF文件第47页  
®
Numonyx™ StrataFlash Embedded Memory (J3-65nm)  
15.2  
AC Read Specifications  
Chip enable truth table can be found on Table 6 on page 15  
Test configuration can be found in Table 22 on page 42  
Table 23: AC Read Specification  
Nbr.  
Symbol  
Parameter  
Package  
Min  
Max  
Unit  
Notes  
Easy BGA  
TSOP  
95  
105  
0
R1  
t
t
t
Read/Write Cycle Time  
ns  
1,2,3  
AVAV  
Easy BGA  
TSOP  
95  
105  
95  
105  
25  
150  
R2  
R3  
Address to Output Delay  
CEX to Output Delay  
ns  
ns  
1,2,3  
1,2,3  
AVQV  
ELQV  
Easy BGA  
TSOP  
R4  
R5  
R6  
R7  
R8  
R9  
t
t
t
t
t
t
OE# to Non-Array Output Delay  
RP# High to Output Delay  
CEX to Output in Low Z  
ns  
ns  
ns  
ns  
ns  
ns  
1,2,3  
1,2,3  
GLQV  
PHQV  
ELQX  
GLQX  
EHQZ  
GHQZ  
1,2,3,4  
1,2,3,4  
1,2,3,4  
1,2,3,4  
OE# to Output in Low Z  
0
CEX High to Output in High Z  
OE# High to Output in High Z  
20  
15  
Output Hold from Address, CEX, or OE# Change,  
Whichever Occurs First  
R10  
t
0
ns  
1,2,3,4  
OH  
R11  
R12  
R13  
R14  
R15  
R16  
t
t
t
t
t
t
t
CEX Low to BYTE# High or Low  
BYTE# to Output Delay  
0
10  
1
ns  
µs  
µs  
ns  
ns  
ns  
1,2,3,4  
1,2,3  
ELFL/ ELFH  
t
FLQV/ FHQV  
BYTE# to Output in High Z  
CEx High to CEx Low  
1
1,2,3,4  
1,2,3,4  
4, 5  
FLQZ  
EHEL  
APA  
25  
25  
Page Address Access Time  
OE# to Array Output Delay  
1,2,3  
GLQV  
Notes:  
1.  
CE low is defined as the falling edge of CE0, CE1, or CE2 that enables the device. CE high is defined as the rising edge  
X
X
of CE0, CE1, or CE2 that disables the device  
2.  
3.  
See AC Input/Output Reference Waveforms for the maximum allowable input slew rate.  
OE# may be delayed up to t  
ELQV  
-t  
after the falling edge of CE0, CE1, or CE2 that enables the device without impact on  
ELQV GLQV  
t
.
4.  
5.  
Sampled, not 100% tested.  
For devices configured to standard word/byte read mode, R15 (t  
) will equal R2 (t  
).  
AVQV  
APA  
December 2008  
319942-02  
Datasheet  
43